SI4953ADY-T1-GE3

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Overview of SI4953ADY-T1-GE3

Part NumberSI4953ADY-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2P-CH 30V 3.7A 8-SOIC
DatasheetsDownload SI4953ADY-T1-GE3 Datasheet PDFPDF Icon
Price for SI4953ADY-T1-GE3

Specification of SI4953ADY-T1-GE3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
3.7A
Rds On (Max) @ Id, Vgs
53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
1V @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC

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