SI5404BDC-T1-GE3

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Overview of SI5404BDC-T1-GE3

Part NumberSI5404BDC-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 20V 5.4A 1206-8
Price for SI5404BDC-T1-GE3

Specification of SI5404BDC-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
28mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
1206-8 ChipFET
Package / Case
8-SMD, Flat Lead

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