SI5509DC-T1-GE3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of SI5509DC-T1-GE3

Part NumberSI5509DC-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N/P-CH 20V 6.1A 1206-8
Price for SI5509DC-T1-GE3

Specification of SI5509DC-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
6.1A, 4.8A
Rds On (Max) @ Id, Vgs
52mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
455pF @ 10V
Power - Max
4.5W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET

Parts Information

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)

Contact Information

Fields marked with a * are required

Introduction

SI5509DC-T1-GE3 is in Stock, Find SI5509DC-T1-GE3 electronics components stock, Technical information, Inventory and Price here at Ic-find.com, send us an inquiry for SI5509DC-T1-GE3 to get the price and lead time now! We can offer fast shipment via DHL/FedEx/UPS.

Email us: [email protected] or RFQ SI5509DC-T1-GE3 Online.

FAQ

  • 1 How to place an order?[Click to Expand]

  • 2 What payment methods do you offer?[Click to Expand]

  • 3 How do you handle the shipment?[Click to Expand]

  • 4 I can't find a part on IC-find, what should I do?[Click to Expand]

Recommend Products

Your RFQ Preview

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)
Continue Shopping
Go RFQ Page