SI5980DU-T1-GE3

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Overview of SI5980DU-T1-GE3

Part NumberSI5980DU-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 100V 2.5A CHIPFET
DatasheetsDownload SI5980DU-T1-GE3 Datasheet PDFPDF Icon
Price for SI5980DU-T1-GE3

Specification of SI5980DU-T1-GE3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
2.5A
Rds On (Max) @ Id, Vgs
567mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
3.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
78pF @ 50V
Power - Max
7.8W
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
PowerPAK ChipFET Dual
Supplier Device Package
PowerPAK ChipFet Dual

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