SI6913DQ-T1-BE3

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Overview of SI6913DQ-T1-BE3

Part NumberSI6913DQ-T1-BE3
ManufacturerVishay / Siliconix
DescriptionDUAL P-CHANNEL 12-V (D-S) MOSFET
DatasheetsDownload SI6913DQ-T1-BE3 Datasheet PDFPDF Icon
Price for SI6913DQ-T1-BE3

Specification of SI6913DQ-T1-BE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25C
4.9A (Ta)
Rds On (Max) @ Id, Vgs
21mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 400A
Gate Charge (Qg) (Max) @ Vgs
28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
830mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP

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