SI6966EDQ-T1-E3

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Overview of SI6966EDQ-T1-E3

Part NumberSI6966EDQ-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 20V 8TSSOP
DatasheetsDownload SI6966EDQ-T1-E3 Datasheet PDFPDF Icon
Price for SI6966EDQ-T1-E3

Specification of SI6966EDQ-T1-E3

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
-
Rds On (Max) @ Id, Vgs
30mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250A (Min)
Gate Charge (Qg) (Max) @ Vgs
25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.25W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP

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