SI7138DP-T1-E3

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Overview of SI7138DP-T1-E3

Part NumberSI7138DP-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 60V 30A PPAK SO-8
DatasheetsDownload SI7138DP-T1-E3 Datasheet PDFPDF Icon
Price for SI7138DP-T1-E3

Specification of SI7138DP-T1-E3

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 19.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
5.4W (Ta), 96W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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