SI7214DN-T1-E3

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Overview of SI7214DN-T1-E3

Part NumberSI7214DN-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 30V 4.6A 1212-8
DatasheetsDownload SI7214DN-T1-E3 Datasheet PDFPDF Icon
Price for SI7214DN-T1-E3

Specification of SI7214DN-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
4.6A
Rds On (Max) @ Id, Vgs
40mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.3W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8 Dual
Supplier Device Package
PowerPAK 1212-8 Dual

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