SI7322DN-T1-E3

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Overview of SI7322DN-T1-E3

Part NumberSI7322DN-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 100V 18A PPAK 1212-8
DatasheetsDownload SI7322DN-T1-E3 Datasheet PDFPDF Icon
Price for SI7322DN-T1-E3

Specification of SI7322DN-T1-E3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
58mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 1212-8
Package / Case
PowerPAK 1212-8

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