SI7450DP-T1-E3

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Overview of SI7450DP-T1-E3

Part NumberSI7450DP-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 200V 3.2A PPAK SO-8
DatasheetsDownload SI7450DP-T1-E3 Datasheet PDFPDF Icon
Price for SI7450DP-T1-E3

Specification of SI7450DP-T1-E3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.9W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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