SI7462DP-T1-GE3

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Overview of SI7462DP-T1-GE3

Part NumberSI7462DP-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 200V 2.6A PPAK SO-8
DatasheetsDownload SI7462DP-T1-GE3 Datasheet PDFPDF Icon
Price for SI7462DP-T1-GE3

Specification of SI7462DP-T1-GE3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
130mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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