SI7540DP-T1-GE3

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Overview of SI7540DP-T1-GE3

Part NumberSI7540DP-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N/P-CH 12V 7.6A PPAK SO-8
DatasheetsDownload SI7540DP-T1-GE3 Datasheet PDFPDF Icon
Price for SI7540DP-T1-GE3

Specification of SI7540DP-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25C
7.6A, 5.7A
Rds On (Max) @ Id, Vgs
17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.4W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK SO-8 Dual
Supplier Device Package
PowerPAK SO-8 Dual

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