SI7858ADP-T1-GE3

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Overview of SI7858ADP-T1-GE3

Part NumberSI7858ADP-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 12V 20A PPAK SO-8
Price for SI7858ADP-T1-GE3

Specification of SI7858ADP-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 29A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
5700 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
1.9W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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