SI7922DN-T1-GE3

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Overview of SI7922DN-T1-GE3

Part NumberSI7922DN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 100V 1.8A 1212-8
DatasheetsDownload SI7922DN-T1-GE3 Datasheet PDFPDF Icon
Price for SI7922DN-T1-GE3

Specification of SI7922DN-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
1.8A
Rds On (Max) @ Id, Vgs
195mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.3W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8 Dual
Supplier Device Package
PowerPAK 1212-8 Dual

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