SI8405DB-T1-E3

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Overview of SI8405DB-T1-E3

Part NumberSI8405DB-T1-E3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 12V 3.6A 4MICROFOOT
DatasheetsDownload SI8405DB-T1-E3 Datasheet PDFPDF Icon
Price for SI8405DB-T1-E3

Specification of SI8405DB-T1-E3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
55mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.47W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-XFBGA, CSPBGA

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