SI8417DB-T2-E1

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Overview of SI8417DB-T2-E1

Part NumberSI8417DB-T2-E1
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 12V 14.5A 6MICROFOOT
Price for SI8417DB-T2-E1

Specification of SI8417DB-T2-E1

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
21mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
2220 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
2.9W (Ta), 6.57W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-Micro Foot (1.5x1)
Package / Case
6-MICRO FOOTCSP

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