SI8497DB-T2-E1

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Overview of SI8497DB-T2-E1

Part NumberSI8497DB-T2-E1
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 30V 13A 6MICROFOOT
DatasheetsDownload SI8497DB-T2-E1 Datasheet PDFPDF Icon
Price for SI8497DB-T2-E1

Specification of SI8497DB-T2-E1

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2V, 4.5V
Rds On (Max) @ Id, Vgs
53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
1320 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.77W (Ta), 13W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-microfoot
Package / Case
6-UFBGA

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