SI8812DB-T2-E1

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Overview of SI8812DB-T2-E1

Part NumberSI8812DB-T2-E1
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 20V 4MICROFOOT
DatasheetsDownload SI8812DB-T2-E1 Datasheet PDFPDF Icon
Price for SI8812DB-T2-E1

Specification of SI8812DB-T2-E1

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 8 V
Vgs (Max)
5V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-UFBGA

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