SI8902EDB-T2-E1

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Overview of SI8902EDB-T2-E1

Part NumberSI8902EDB-T2-E1
ManufacturerVishay / Siliconix
DescriptionMOSFET 2N-CH 20V 3.9A 6-MFP
DatasheetsDownload SI8902EDB-T2-E1 Datasheet PDFPDF Icon
Price for SI8902EDB-T2-E1

Specification of SI8902EDB-T2-E1

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
3.9A
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1V @ 980A
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
6-MICRO FOOTCSP
Supplier Device Package
6-Micro Foot (2.36x1.56)

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