SI9424BDY-T1-GE3

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Overview of SI9424BDY-T1-GE3

Part NumberSI9424BDY-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 20V 5.6A 8SO
DatasheetsDownload SI9424BDY-T1-GE3 Datasheet PDFPDF Icon
Price for SI9424BDY-T1-GE3

Specification of SI9424BDY-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
25mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 4.5 V
Vgs (Max)
9V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.25W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

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