SI9934BDY-T1-GE3

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Overview of SI9934BDY-T1-GE3

Part NumberSI9934BDY-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2P-CH 12V 4.8A 8SOIC
Price for SI9934BDY-T1-GE3

Specification of SI9934BDY-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25C
4.8A
Rds On (Max) @ Id, Vgs
35mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC

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