SIA485DJ-T1-GE3

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Overview of SIA485DJ-T1-GE3

Part NumberSIA485DJ-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 150V 1.6A PPAK SC70
DatasheetsDownload SIA485DJ-T1-GE3 Datasheet PDFPDF Icon
Price for SIA485DJ-T1-GE3

Specification of SIA485DJ-T1-GE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.3 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
155 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
15.6W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SC-70-6
Package / Case
PowerPAK SC-70-6

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