SIA911EDJ-T1-GE3

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Overview of SIA911EDJ-T1-GE3

Part NumberSIA911EDJ-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2P-CH 20V 4.5A SC70-6
DatasheetsDownload SIA911EDJ-T1-GE3 Datasheet PDFPDF Icon
Price for SIA911EDJ-T1-GE3

Specification of SIA911EDJ-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
4.5A
Rds On (Max) @ Id, Vgs
101mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
11nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
7.8W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK SC-70-6 Dual
Supplier Device Package
PowerPAK SC-70-6 Dual

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