SIE836DF-T1-GE3

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Overview of SIE836DF-T1-GE3

Part NumberSIE836DF-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 200V 18.3A 10POLARPK
DatasheetsDownload SIE836DF-T1-GE3 Datasheet PDFPDF Icon
Price for SIE836DF-T1-GE3

Specification of SIE836DF-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 104W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK (SH)
Package / Case
10-PolarPAK (SH)

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