SIGC11T60SNCX1SA2

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Overview of SIGC11T60SNCX1SA2

Part NumberSIGC11T60SNCX1SA2
ManufacturerInfineon Technologies
DescriptionIGBT 3 CHIP 600V WAFER
DatasheetsDownload SIGC11T60SNCX1SA2 Datasheet PDFPDF Icon
Price for SIGC11T60SNCX1SA2

Specification of SIGC11T60SNCX1SA2

Status
Obsolete
Package
Bulk
Supplier
Infineon Technologies
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
10 A
Current - Collector Pulsed (Icm)
30 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 10A
Power - Max
-
Switching Energy
-
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25C
28ns/198ns
Test Condition
400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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