SIHA12N60E-GE3

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Overview of SIHA12N60E-GE3

Part NumberSIHA12N60E-GE3
ManufacturerVishay / Siliconix
DescriptionN-CHANNEL 600V
DatasheetsDownload SIHA12N60E-GE3 Datasheet PDFPDF Icon
Price for SIHA12N60E-GE3

Specification of SIHA12N60E-GE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT)
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack

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