SIHB28N60EF-T1-GE3

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Overview of SIHB28N60EF-T1-GE3

Part NumberSIHB28N60EF-T1-GE3
ManufacturerVishay / Siliconix
DescriptionN-CHANNEL 600V
DatasheetsDownload SIHB28N60EF-T1-GE3 Datasheet PDFPDF Icon
Price for SIHB28N60EF-T1-GE3

Specification of SIHB28N60EF-T1-GE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
123mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2714 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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