SIHD1K4N60E-GE3

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Overview of SIHD1K4N60E-GE3

Part NumberSIHD1K4N60E-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 600V 4.2A TO252AA
DatasheetsDownload SIHD1K4N60E-GE3 Datasheet PDFPDF Icon
Price for SIHD1K4N60E-GE3

Specification of SIHD1K4N60E-GE3

Status
Active
Series
E
Package
Bulk
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
172 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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