SIHG47N60AEF-GE3

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Overview of SIHG47N60AEF-GE3

Part NumberSIHG47N60AEF-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 600V 40A TO247AC
DatasheetsDownload SIHG47N60AEF-GE3 Datasheet PDFPDF Icon
Price for SIHG47N60AEF-GE3

Specification of SIHG47N60AEF-GE3

Status
Active
Series
EF
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
70mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
189 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
3576 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3

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