SIHK105N60EF-T1GE3

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Overview of SIHK105N60EF-T1GE3

Part NumberSIHK105N60EF-T1GE3
ManufacturerVishay / Siliconix
DescriptionE SERIES POWER MOSFET POWERPAK 1
DatasheetsDownload SIHK105N60EF-T1GE3 Datasheet PDFPDF Icon
Price for SIHK105N60EF-T1GE3

Specification of SIHK105N60EF-T1GE3

Status
Active
Series
EF
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2301 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
142W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK10 x 12
Package / Case
8-PowerBSFN

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