SIHU5N80AE-GE3

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Overview of SIHU5N80AE-GE3

Part NumberSIHU5N80AE-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 800V 4.4A TO251AA
DatasheetsDownload SIHU5N80AE-GE3 Datasheet PDFPDF Icon
Price for SIHU5N80AE-GE3

Specification of SIHU5N80AE-GE3

Status
Active
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
321 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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