SIJ150DP-T1-GE3

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Overview of SIJ150DP-T1-GE3

Part NumberSIJ150DP-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 45V 30.9A/110A PPAK
DatasheetsDownload SIJ150DP-T1-GE3 Datasheet PDFPDF Icon
Price for SIJ150DP-T1-GE3

Specification of SIJ150DP-T1-GE3

Status
Active
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
45 V
Current - Continuous Drain (Id) @ 25C
30.9A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.83mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 65.7W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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