SIR180ADP-T1-RE3

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Overview of SIR180ADP-T1-RE3

Part NumberSIR180ADP-T1-RE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 60V PPAK SO-8
Price for SIR180ADP-T1-RE3

Specification of SIR180ADP-T1-RE3

Status
Active
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
35A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250A
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3280 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
5.4W (Ta), 83.3W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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