SIR638DP-T1-RE3

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Overview of SIR638DP-T1-RE3

Part NumberSIR638DP-T1-RE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 40V 100A PPAK SO-8
DatasheetsDownload SIR638DP-T1-RE3 Datasheet PDFPDF Icon
Price for SIR638DP-T1-RE3

Specification of SIR638DP-T1-RE3

Status
Active
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
204 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
10500 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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