SIR870BDP-T1-RE3

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Overview of SIR870BDP-T1-RE3

Part NumberSIR870BDP-T1-RE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 100V 18.8A/81A PPAK
DatasheetsDownload SIR870BDP-T1-RE3 Datasheet PDFPDF Icon
Price for SIR870BDP-T1-RE3

Specification of SIR870BDP-T1-RE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
18.8A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4870 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
5.4W (Ta), 100W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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