SIRA90ADP-T1-GE3

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Overview of SIRA90ADP-T1-GE3

Part NumberSIRA90ADP-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 30V 71A/334A PPAK
DatasheetsDownload SIRA90ADP-T1-GE3 Datasheet PDFPDF Icon
Price for SIRA90ADP-T1-GE3

Specification of SIRA90ADP-T1-GE3

Status
Discontinued at Digi-Key
Series
TrenchFET®
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
71A (Ta), 334A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
0.78mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
9120 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
6.3W (Ta), 104W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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