SIS112LDN-T1-GE3

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Overview of SIS112LDN-T1-GE3

Part NumberSIS112LDN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionN-CHANNEL 100 V (D-S) MOSFET POW
DatasheetsDownload SIS112LDN-T1-GE3 Datasheet PDFPDF Icon
Price for SIS112LDN-T1-GE3

Specification of SIS112LDN-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
3.5A (Ta), 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
119mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
11.8 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
355 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.2W (Ta), 19.8W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 1212-8
Package / Case
PowerPAK 1212-8

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