SIS612EDNT-T1-GE3

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Overview of SIS612EDNT-T1-GE3

Part NumberSIS612EDNT-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 20V 50A PPAK1212-8S
DatasheetsDownload SIS612EDNT-T1-GE3 Datasheet PDFPDF Icon
Price for SIS612EDNT-T1-GE3

Specification of SIS612EDNT-T1-GE3

Status
Obsolete
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
2060 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 1212-8S
Package / Case
PowerPAK 1212-8S

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