SISF04DN-T1-GE3

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Overview of SISF04DN-T1-GE3

Part NumberSISF04DN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET DUAL N-CH 30V PPAK 1212-8
DatasheetsDownload SISF04DN-T1-GE3 Datasheet PDFPDF Icon
Price for SISF04DN-T1-GE3

Specification of SISF04DN-T1-GE3

Status
Active
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
30A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs
4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 15V
Power - Max
5.2W (Ta), 69.4W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8SCD
Supplier Device Package
PowerPAK 1212-8SCD

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