SISH625DN-T1-GE3

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Overview of SISH625DN-T1-GE3

Part NumberSISH625DN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 30V 17.3A/35A PPAK
DatasheetsDownload SISH625DN-T1-GE3 Datasheet PDFPDF Icon
Price for SISH625DN-T1-GE3

Specification of SISH625DN-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
17.3A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
126 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4427 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 1212-8SH
Package / Case
PowerPAK 1212-8SH

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