SISS32LDN-T1-GE3

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Overview of SISS32LDN-T1-GE3

Part NumberSISS32LDN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 80V 17.4A/63A PPAK
DatasheetsDownload SISS32LDN-T1-GE3 Datasheet PDFPDF Icon
Price for SISS32LDN-T1-GE3

Specification of SISS32LDN-T1-GE3

Status
Active
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
17.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2550 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 1212-8SH
Package / Case
PowerPAK 1212-8SH

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