SIZ998DT-T1-GE3

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Overview of SIZ998DT-T1-GE3

Part NumberSIZ998DT-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET 2 N-CH 30V 8-POWERPAIR
DatasheetsDownload SIZ998DT-T1-GE3 Datasheet PDFPDF Icon
Price for SIZ998DT-T1-GE3

Specification of SIZ998DT-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual), Schottky
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs
6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8.1nC @ 4.5V, 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
930pF @ 15V, 2620pF @ 15V
Power - Max
20.2W, 32.9W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair (6x5)

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