SP000089223

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Overview of SP000089223

Part NumberSP000089223
ManufacturerInfineon Technologies
DescriptionP-CHANNEL POWER MOSFET
DatasheetsDownload SP000089223 Datasheet PDFPDF Icon
Price for SP000089223

Specification of SP000089223

Status
Active
Series
SIPMOS®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25C
260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Rds On (Max) @ Id, Vgs
12Ohm @ 260mA, 10V
Vgs(th) (Max) @ Id
2V @ 130A
Gate Charge (Qg) (Max) @ Vgs
5.4 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
104 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4-21
Package / Case
TO-261-4, TO-261AA

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