SPB02N60S5

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Overview of SPB02N60S5

Part NumberSPB02N60S5
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload SPB02N60S5 Datasheet PDFPDF Icon
Price for SPB02N60S5

Specification of SPB02N60S5

Status
Active
Series
CoolMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
5.5V @ 80A
Gate Charge (Qg) (Max) @ Vgs
9.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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