SPB08P06P

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Overview of SPB08P06P

Part NumberSPB08P06P
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 60V 8.8A TO263-3
DatasheetsDownload SPB08P06P Datasheet PDFPDF Icon
Price for SPB08P06P

Specification of SPB08P06P

Status
Obsolete
Series
SIPMOS®
Package
Tape & Reel (TR)
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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