SPB11N60C3ATMA1

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Overview of SPB11N60C3ATMA1

Part NumberSPB11N60C3ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 11A TO263-3
DatasheetsDownload SPB11N60C3ATMA1 Datasheet PDFPDF Icon
Price for SPB11N60C3ATMA1

Specification of SPB11N60C3ATMA1

Status
Not For New Designs
Series
CoolMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3.9V @ 500A
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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