SPD04P10PG

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Overview of SPD04P10PG

Part NumberSPD04P10PG
ManufacturerInfineon Technologies
DescriptionSPD04P10 - 20V-250V P-CHANNEL PO
DatasheetsDownload SPD04P10PG Datasheet PDFPDF Icon
Price for SPD04P10PG

Specification of SPD04P10PG

Status
Active
Series
SIPMOS®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id
4V @ 380A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
319 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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