SPD09P06PLGBTMA1

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Overview of SPD09P06PLGBTMA1

Part NumberSPD09P06PLGBTMA1
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 60V 9.7A TO252-3
DatasheetsDownload SPD09P06PLGBTMA1 Datasheet PDFPDF Icon
Price for SPD09P06PLGBTMA1

Specification of SPD09P06PLGBTMA1

Status
Active
Series
SIPMOS®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
250mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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