SPI47N10L

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Overview of SPI47N10L

Part NumberSPI47N10L
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 100V 47A TO262-3
DatasheetsDownload SPI47N10L Datasheet PDFPDF Icon
Price for SPI47N10L

Specification of SPI47N10L

Status
Obsolete
Series
SIPMOS®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
26mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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