SPP18P06PHKSA1

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Overview of SPP18P06PHKSA1

Part NumberSPP18P06PHKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET P-CH 60V 18.7A TO220-3
DatasheetsDownload SPP18P06PHKSA1 Datasheet PDFPDF Icon
Price for SPP18P06PHKSA1

Specification of SPP18P06PHKSA1

Status
Obsolete
Series
SIPMOS®
Package
Tube
Supplier
Infineon Technologies
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
81.1W (Ta)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3

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